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1.
《Mendeleev Communications》2022,32(5):629-631
The Michael–Mannich cascade cyclization of cyano olefins, ethyl 4,4,4-trifluoro-3-oxobutanoate, aromatic aldehydes and ammonium acetate provides convenient stereoselective formation of ethyl 5,5-dicyano-4,6-diaryl-2-hydroxy-2-(trifluoromethyl)piperidine-3-carboxylates with fourstereogenic centers and dialkyl 4,6-diaryl-5-cyano-2-hydroxy-2-(trifluoromethyl)piperidine-3,5-dicarboxylates with five stereogenic centers. Ammonium acetate plays dual role, acting as a base and as a nitrogen source.  相似文献   
2.
In this paper, we study the Holder regularity of weak solutions to the Dirichlet problem associated with the regional fractional Laplacian (-△)αΩ on a bounded open set Ω ■R(N ≥ 2) with C(1,1) boundary ■Ω. We prove that when f ∈ Lp(Ω), and g ∈ C(Ω), the following problem (-△)αΩu = f in Ω, u = g on ■Ω, admits a unique weak solution u ∈ W(α,2)(Ω) ∩ C(Ω),where p >N/2-2α and 1/2< α < 1. To solve this problem, we consider it into two special cases, i.e.,g ≡ 0 on ■Ω and f ≡ 0 in Ω. Finally, taking into account the preceding two cases, the general conclusion is drawn.  相似文献   
3.
非对称声分束超表面是由人工微单元结构按照特定序列构建的二维平面结构,可将垂直入射的声波分成两束传播方向和分束比自由调控的透射波,在声功能器件设计及声通信领域具有广泛的应用前景。本文系统研究了一种实现非对称声分束的设计理论和实现方法,基于局域声功率守恒条件研究了声分束器的设计理论、阻抗矩阵分布、法向声强分布、声压场分布等。利用遗传算法对四串联共振腔结构进行参数优化实现了声分束器所需的阻抗矩阵分布,声压场分布表明声波入射到声分束器后在入射侧激发出两列传播方向相反且幅值和衰减系数均相同的表面波,实现了入射侧与透射侧的局域声功率相互匹配。声波经过声分束器后被分为两束透射波,两束透射波的折射角和透射系数与理论值十分吻合,证明了设计理论及实现方法的正确性和可行性。本文的研究工作可以为新型非对称声分束结构设计提供理论参考、设计方法和技术支持,并促进其在工程领域的实际应用。  相似文献   
4.
A one-step Rh-catalyzed site-selective ortho-C−H alkynylation of perylene as well as naphthalene mono- and diimides is reported. A single step regioselective access to ortho-C−H alkynylated derivatives of these ryleneimides not only increases the step economy of the ortho-functionalization on these dyes but also provides a quick access route towards highly functionalized dyes that have potential optoelectronic applications. Increased solubility of tetra(triisopropylsilyl)acetylenyl PDIs in organic solvents greatly enhances their utility for further derivatization.  相似文献   
5.
对晶体硅(c-Si)太阳能电池而言, 氧化铝(AlOx)是一种广泛使用的钝化材料, 因为它具有优异的沉积保形性和良好的钝化质量. 为了确保AlOx发挥其良好的钝化效果, 在沉积后退火并氢化处理是必不可少的. 通过在AlOx薄膜上沉积氢化氮化硅(SiNx:H)来实现氢化, 利用开尔文探针力显微镜研究了在不同热处理和氢化作用下, AlOx/SiNx:H双层薄膜功函数的变化, 并基于沉积薄膜所含氢与固定电荷展开了讨论. 发现钝化质量和功函数之间有相关性, 影响因素包括薄膜厚度、氢化与热处理顺序.  相似文献   
6.
In this work, a vanillin complex is immobilized onto MCM-41 and characterized by FT-IR, X-ray diffraction, scanning electron microscopy, energy dispersive spectroscopy, thermogravimetric analysis, and BET techniques. This supported Schiff base complex was found to be an efficient and recoverable catalyst for the chemoselective oxidation of sulfides into sulfoxides and thiols into their corresponding disulfides (using hydrogen peroxide as a green oxidant) and also a suitable catalyst for the preparation of 2,3-dihydroquinazolin-4(1H)-one derivatives in water at 90°C. Using this protocol, we show that a variety of disulfides, sulfoxides, and 2,3-dihydroquinazolin-4(1H)-one derivatives can be synthesized in green conditions. The catalyst can be recovered and recycled for further reactions without appreciable loss of catalytic performance.  相似文献   
7.
8.
A novel nanomagnetic basic catalyst of caesium carbonate supported on hydroxyapatite‐coated Ni0.5Zn0.5Fe2O4 magnetic nanoparticles (Ni0.5Zn0.5Fe2O4@HAP‐Cs2CO3) was prepared. This new catalyst was fully characterized using Fourier transform infrared spectroscopy, transmission and scanning electron microscopy, X‐ray diffraction and vibrating sample magnetometry techniques, and then the catalytic activity of this catalyst was investigated in the synthesis of 1H‐pyrazolo[1,2‐b]phthalazine‐5,10‐dione derivatives. Also, Ni0.5Zn0.5Fe2O4@HAP‐Cs2CO3 could be reused at least five times without significant loss of activity and could be recovered easily by applying an external magnet. Thus, the developed nanomagnetic catalyst is potentially useful for the green and economic production of organic compounds. Copyright © 2015 John Wiley & Sons, Ltd.  相似文献   
9.
10.
High-efficiency semiconductor lasers and light-emitting diodes operating in the 3–5?μm mid-infrared (mid-IR) spectral range are currently of great demand for a wide variety of applications, in particular, gas sensing, noninvasive medical tests, IR spectroscopy etc. III-V compounds with a lattice constant of about 6.1?Å are traditionally used for this spectral range. The attractive idea to fabricate such emitters on GaAs substrates by using In(Ga,Al)As compounds is restricted by either the minimum operating wavelength of ~8?μm in case of pseudomorphic AlGaAs-based quantum cascade lasers or requires utilization of thick metamorphic InxAl1-xAs buffer layers (MBLs) playing a key role in reducing the density of threading dislocations (TDs) in an active region, which otherwise result in a strong decay of the quantum efficiency of such mid-IR emitters. In this review we present the results of careful investigations of employing the convex-graded InxAl1-xAs MBLs for fabrication by molecular beam epitaxy on GaAs (001) substrates of In(Ga,Al)As heterostructures with a combined type-II/type-I InSb/InAs/InGaAs quantum well (QW) for efficient mid-IR emitters (3–3.6?μm). The issues of strain relaxation, elastic stress balance, efficiency of radiative and non-radiative recombination at T?=?10–300?K are discussed in relation to molecular beam epitaxy (MBE) growth conditions and designs of the structures. A wide complex of techniques including in-situ reflection high-energy electron diffraction, atomic force microscopy (AFM), scanning and transmission electron microscopies, X-ray diffractometry, reciprocal space mapping, selective area electron diffraction, as well as photoluminescence (PL) and Fourier-transformed infrared spectroscopy was used to study in detail structural and optical properties of the metamorphic QW structures. Optimization of the growth conditions (the substrate temperature, the As4/III ratio) and elastic strain profiles governed by variation of an inverse step in the In content profile between the MBL and the InAlAs virtual substrate results in decrease in the TD density (down to 3?×?107 cm?2), increase of the thickness of the low-TD-density near-surface MBL region to 250–300?nm, the extremely low surface roughness with the RMS value of 1.6–2.4?nm, measured by AFM, as well as rather high 3.5?μm-PL intensity at temperatures up to 300?K in such structures. The obtained results indicate that the metamorphic InSb/In(Ga,Al)As QW heterostructures of proper design, grown under the optimum MBE conditions, are very promising for fabricating the efficient mid-IR emitters on a GaAs platform.  相似文献   
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